公开(公告)号：US09142669B2

公开(公告)日：2015-09-22

申请号：US14266227

申请日：2014-04-30

Applicant: LG Display Co., Ltd.

Inventor： Jung Hyun Lee ,  Won Joon Ho ,  Hong Jae Shin

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/10 ,  H01L29/04 ,  H01L31/00 ,  H01L27/14 ,  H01L29/15 ,  H01L29/78 ,  H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L29/417 ,  H01L51/40 ,  H01L21/00 ,  H01L21/84 ,  H01J1/62 ,  H01J63/04

CPC classification number: H01L29/7831 ,  H01L27/1214 ,  H01L27/3244 ,  H01L29/41733 ,  H01L29/786 ,  H01L29/78648

Abstract: A thin film transistor substrate provided with two gate electrodes comprises a thin film transistor including a first gate electrode formed on the substrate; an active layer formed on the first gate electrode; first and second electrodes formed on the active layer; and a second gate electrode formed on the first electrode, the second electrode, and the active layer, wherein the second gate electrode is provided with an opening formed in an area corresponding to at least a part of the second electrode.

Abstract translation: 设置有两个栅电极的薄膜晶体管基板包括薄膜晶体管，其包括形成在基板上的第一栅电极; 形成在所述第一栅电极上的有源层; 形成在有源层上的第一和第二电极; 以及形成在所述第一电极，所述第二电极和所述有源层上的第二栅电极，其中所述第二栅电极设置有形成在对应于所述第二电极的至少一部分的区域中的开口。

公开(公告)号：US20140042395A1

公开(公告)日：2014-02-13

申请号：US13685572

申请日：2012-11-26

Applicant: LG DISPLAY CO., LTD.

Inventor： Jong Sik Shim ,  Woo Jin Nam ,  Hong Jae Shin ,  Min Kyu Chang

IPC: H01L29/786 ,  H01L51/50 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/50

Abstract: Disclosed is a thin film transistor substrate which facilitates to improve output and transfer characteristics of thin film transistor, wherein the thin film transistor substrate comprises a thin film transistor comprising a lower gate electrode on a substrate, an active layer on the lower gate electrode, source and drain electrodes on the active layer, and an upper gate electrode on the source electrode, drain electrode and active layer, the upper gate electrode for covering a channel region defined by the source and drain electrodes; and a contact portion for electrically connecting the lower gate electrode with the upper gate electrode.

Abstract translation: 公开了一种有助于改善薄膜晶体管的输出和传输特性的薄膜晶体管基板，其中薄膜晶体管基板包括薄膜晶体管，薄膜晶体管包括在基板上的下栅电极，下栅电极上的有源层，源极 和有源层上的漏电极，以及源电极，漏电极和有源层上的上栅电极，用于覆盖由源电极和漏电极限定的沟道区的上栅电极; 以及用于将下栅电极与上栅电极电连接的接触部分。

公开(公告)号：US09178048B2

公开(公告)日：2015-11-03

申请号：US14546912

申请日：2014-11-18

Applicant: LG Display Co., Ltd.

Inventor： Jong Sik Shim ,  Woo Jin Nam ,  Hong Jae Shin ,  Min Kyu Chang

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L51/50 ,  H01L29/417

CPC classification number: H01L29/66969 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/50

Abstract: Disclosed is a thin film transistor substrate which facilitates to improve output and transfer characteristics of thin film transistor, wherein the thin film transistor substrate comprises a thin film transistor comprising a lower gate electrode on a substrate, an active layer on the lower gate electrode, source and drain electrodes on the active layer, and an upper gate electrode on the source electrode, drain electrode and active layer, the upper gate electrode for covering a channel region defined by the source and drain electrodes; and a contact portion for electrically connecting the lower gate electrode with the upper gate electrode.

Abstract translation: 公开了一种有助于改善薄膜晶体管的输出和传输特性的薄膜晶体管基板，其中薄膜晶体管基板包括薄膜晶体管，薄膜晶体管包括在基板上的下栅电极，下栅电极上的有源层，源极 和有源层上的漏电极，以及源电极，漏电极和有源层上的上栅电极，用于覆盖由源电极和漏电极限定的沟道区的上栅电极; 以及用于将下栅电极与上栅电极电连接的接触部分。

公开(公告)号：US20150072483A1

公开(公告)日：2015-03-12

申请号：US14546912

申请日：2014-11-18

Applicant: LG Display Co., Ltd.

Inventor： Jong Sik Shim ,  Woo Jin Nam ,  Hong Jae Shin ,  Min Kyu Chang

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/50

Abstract: Disclosed is a thin film transistor substrate which facilitates to improve output and transfer characteristics of thin film transistor, wherein the thin film transistor substrate comprises a thin film transistor comprising a lower gate electrode on a substrate, an active layer on the lower gate electrode, source and drain electrodes on the active layer, and an upper gate electrode on the source electrode, drain electrode and active layer, the upper gate electrode for covering a channel region defined by the source and drain electrodes; and a contact portion for electrically connecting the lower gate electrode with the upper gate electrode.

Abstract translation: 公开了一种有助于改善薄膜晶体管的输出和传输特性的薄膜晶体管基板，其中薄膜晶体管基板包括薄膜晶体管，薄膜晶体管包括在基板上的下栅电极，下栅电极上的有源层，源极 和有源层上的漏电极，以及源电极，漏电极和有源层上的上栅电极，用于覆盖由源电极和漏电极限定的沟道区的上栅电极; 以及用于将下栅电极与上栅电极电连接的接触部分。

公开(公告)号：US08916915B2

公开(公告)日：2014-12-23

申请号：US13685572

申请日：2012-11-26

Applicant: LG Display Co., Ltd.

Inventor： Jong Sik Shim ,  Woo Jin Nam ,  Hong Jae Shin ,  Min Kyu Chang

IPC: H01L31/062 ,  H01L29/66 ,  H01L29/786 ,  H01L51/50

CPC classification number: H01L29/66969 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/50

Abstract: Disclosed is a thin film transistor substrate which facilitates to improve output and transfer characteristics of thin film transistor, wherein the thin film transistor substrate comprises a thin film transistor comprising a lower gate electrode on a substrate, an active layer on the lower gate electrode, source and drain electrodes on the active layer, and an upper gate electrode on the source electrode, drain electrode and active layer, the upper gate electrode for covering a channel region defined by the source and drain electrodes; and a contact portion for electrically connecting the lower gate electrode with the upper gate electrode.

Abstract translation: 公开了一种有助于改善薄膜晶体管的输出和传输特性的薄膜晶体管基板，其中薄膜晶体管基板包括薄膜晶体管，薄膜晶体管包括在基板上的下栅电极，下栅电极上的有源层，源极 和有源层上的漏电极，以及源电极，漏电极和有源层上的上栅电极，用于覆盖由源电极和漏电极限定的沟道区的上栅电极; 以及用于将下栅电极与上栅电极电连接的接触部分。