Invention Grant
- Patent Title: Doped electrodes used to inhibit oxygen loss in ReRAM device
- Patent Title (中): 用于抑制ReRAM器件中的氧损失的掺杂电极
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Application No.: US13784465Application Date: 2013-03-04
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Publication No.: US09178142B2Publication Date: 2015-11-03
- Inventor: Mihir Tendulkar
- Applicant: Intermolecular Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L29/06 ; H01L27/22 ; H01L27/24
Abstract:
A nonvolatile memory device and method for forming a resistive switching memory element, with improved lifetime and switching performance. A nonvolatile memory element includes resistive switching layer formed between a first and second electrode. The resistive switching layer comprises a metal oxide. One or more electrodes include a dopant material to provide the electrode with enhanced oxygen-blocking properties that maintain and control the oxygen ion content within the memory element contributing to increased device lifetime and performance.
Public/Granted literature
- US20140246640A1 Doped Electrodes Used To Inhibit Oxygen Loss in ReRAM Device Public/Granted day:2014-09-04
Information query
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