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公开(公告)号：US09178142B2
公开(公告)日：2015-11-03
申请号：US13784465
申请日：2013-03-04
申请人： Intermolecular Inc.
发明人： Mihir Tendulkar
CPC分类号： H01L45/1253 , H01L27/224 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/16 , H01L45/1616
摘要： A nonvolatile memory device and method for forming a resistive switching memory element, with improved lifetime and switching performance. A nonvolatile memory element includes resistive switching layer formed between a first and second electrode. The resistive switching layer comprises a metal oxide. One or more electrodes include a dopant material to provide the electrode with enhanced oxygen-blocking properties that maintain and control the oxygen ion content within the memory element contributing to increased device lifetime and performance.
摘要翻译： 一种用于形成电阻式开关存储元件的非易失性存储器件和方法，具有改善的寿命和开关性能。 非易失性存储元件包括形成在第一和第二电极之间的电阻式开关层。 电阻开关层包括金属氧化物。 一个或多个电极包括掺杂剂材料，以提供电极具有增强的阻氧性能，其维持和控制存储元件内的氧离子含量有助于增加器件寿命和性能。
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公开(公告)号：US20150187841A1
公开(公告)日：2015-07-02
申请号：US14140723
申请日：2013-12-26
申请人： Intermolecular Inc.
发明人： Yun Wang , Mihir Tendulkar , Milind Weling
CPC分类号： H01L27/2463 , H01L27/24 , H01L27/2409 , H01L27/2481 , H01L28/24 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a variable resistance layer that are interconnected in series by, for example, stacking the two. The embedded resistor prevents excessive electrical currents through the variable resistance layer thereby preventing its over-programming. The embedded resistor is configured to maintain a constant resistance during the operation of the ReRAM cell, such as applying switching currents and changing the resistance of the variable resistance layer. Specifically, the embedded resistor may be electrically broken down during fabrication of the ReRAM cell to improve the subsequent stability of the embedded resistance to electrical fields during operation of the ReRAM cell. The embedded resistor may be made from materials that allow this initial breakdown and to avoid future breakdowns, such metal silicon nitrides, metal aluminum nitrides, and metal boron nitrides.
摘要翻译： 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括嵌入式电阻器和可变电阻层，其通过例如堆叠两者串联互连。 嵌入式电阻器阻止通过可变电阻层的过大电流，从而防止其过度编程。 嵌入式电阻器被配置为在ReRAM单元的操作期间保持恒定的电阻，例如施加开关电流并改变可变电阻层的电阻。 具体地说，在ReRAM单元的制造期间，嵌入式电阻器可能被电分解，以提高在ReRAM单元操作期间嵌入电阻对电场的后续稳定性。 嵌入式电阻器可以由允许该初始击穿并避免将来击穿的材料制成，例如金属氮化硅，金属氮化铝和金属氮化硼。
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3.发明授权Metal aluminum nitride embedded resistors for resistive random memory access cells 有权用于电阻式随机存储器存取单元的金属氮化铝嵌入式电阻器公开(公告)号：US09006696B2
公开(公告)日：2015-04-14
申请号：US14480025
申请日：2014-09-08
CPC分类号： H01L45/165 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.
摘要翻译： 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括串联连接的嵌入式电阻和电阻开关层。 嵌入式电阻器阻止通过电阻开关层的过多电流，特别是当电阻式开关层切换到其低电阻状态时，从而防止过度编程。 嵌入式电阻器包括铝，氮和一种或多种另外的金属（除铝以外）。 控制每个组分的浓度以实现嵌入式电阻器的期望的电阻率和稳定性。 在一些实施例中，电阻率范围为0.1欧姆至40欧姆厘米，并且在施加高达8兆伏特/厘米的电场到嵌入式电阻器时保持基本恒定。 嵌入式电阻器可以由非晶材料制成，并且即使经受典型的退火条件，该材料也可操作以保持非晶态。
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公开(公告)号：US20140175367A1
公开(公告)日：2014-06-26
申请号：US13722569
申请日：2012-12-20
发明人： Mihir Tendulkar , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： Provided are resistive random access memory (ReRAM) cells that include thin resistive switching layers. In some embodiments, the resistive switching layers have a thickness of less than about 50 Angstroms and even less than about 30 Angstroms. The resistive switching characteristics of such thin layers are maintained by controlling their compositions and using particular fabrication techniques. Specifically, low oxygen vacancy metal oxides, such as tantalum oxide, may be used. The concentration of oxygen vacancies may be less than 5 atomic percent. In some embodiments, the resistive switching layers also include nitrogen and. For example, compositions of some specific resistive switching layers may be represented by Ta2O5-XNY, where Y
摘要翻译： 提供了包括薄电阻开关层的电阻随机存取存储器（ReRAM）单元。 在一些实施例中，电阻式开关层的厚度小于约50埃，甚至小于约30埃。 通过控制它们的组成和使用特定的制造技术来维持这种薄层的电阻开关特性。 具体地，可以使用氧化钽等低氧空位金属氧化物。 氧空位的浓度可以小于5原子％。 在一些实施例中，电阻式开关层还包括氮和。 例如，一些特定电阻开关层的组成可以由Ta 2 O 5-X N Y表示，其中Y <（X-0.01）。 电阻开关层可以使用原子层沉积（ALD）形成。
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5.发明申请Limited Maximum Fields of Electrode-Switching Layer Interfaces in Re-RAM Cells 有权限制在重新单元中的电极切换层接口的最大值公开(公告)号：US20140175362A1
公开(公告)日：2014-06-26
申请号：US13721450
申请日：2012-12-20
发明人： Mihir Tendulkar , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2463 , H01L45/08 , H01L45/146 , H01L45/1616 , H01L45/1625
摘要： Provided are ReRAM cells, each having at least one interface between an electrode and a resistive switching layers with a maximum field value of less than 0.25. The electrode materials forming such interfaces include tantalum nitrides doped with lanthanum, aluminum, erbium yttrium, or terbium (e.g., TaX(Dopant)YN, where X is at least about 0.95). The electrode materials have low work functions (e.g., less than about 4.5 eV). At the same time, the resistive switching materials have high relative dielectric permittivities (e.g., greater than about 30) and high electron affinities (greater than about for 3.5 eV). Niobium oxide is one example of a suitable resistive switching material. Another electrode interfacing the resistive switching layer may have different characteristics and, in some embodiments, may be an inert electrode.
摘要翻译： 提供的是ReRAM单元，每个单元在电极和电阻切换层之间具有至少一个界面，其最大场值小于0.25。 形成这种界面的电极材料包括掺杂有镧，铝，铒钇或铽的钽氮化物（例如TaX（掺杂剂）YN，其中X为至少约0.95）。 电极材料具有低功函数（例如小于约4.5eV）。 同时，电阻式开关材料具有较高的相对介电常数（例如大于约30）和高电子亲和力（大于3.5eV）。 氧化铌是合适的电阻式开关材料的一个例子。 连接电阻式开关层的另一电极可以具有不同的特性，并且在一些实施例中可以是惰性电极。
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公开(公告)号：US20140363948A1
公开(公告)日：2014-12-11
申请号：US14468687
申请日：2014-08-26
发明人： Mihir Tendulkar , David Chi
IPC分类号： H01L45/00 , H01L21/285 , H01L49/02
CPC分类号： H01L45/146 , H01L21/28506 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L28/24 , H01L45/06 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1641
摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.
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公开(公告)号：US08847187B2
公开(公告)日：2014-09-30
申请号：US13692850
申请日：2012-12-03
发明人： Mihir Tendulkar , David Chi
CPC分类号： H01L45/146 , H01L21/28506 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L28/24 , H01L45/06 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1641
摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.
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8.发明申请Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells 有权用于电阻式随机存储器存取单元的金属氮化铝嵌入式电阻器公开(公告)号：US20140264223A1
公开(公告)日：2014-09-18
申请号：US13835256
申请日：2013-03-15
CPC分类号： H01L45/165 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.
摘要翻译： 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括串联连接的嵌入式电阻和电阻开关层。 嵌入式电阻器阻止通过电阻开关层的过多电流，特别是当电阻式开关层切换到其低电阻状态时，从而防止过度编程。 嵌入式电阻器包括铝，氮和一种或多种另外的金属（除铝以外）。 控制每个组分的浓度以实现嵌入式电阻器的期望的电阻率和稳定性。 在一些实施例中，电阻率范围为0.1欧姆至40欧姆厘米，并且在施加高达8兆伏特/厘米的电场到嵌入式电阻器时保持基本恒定。 嵌入式电阻器可以由非晶材料制成，并且即使经受典型的退火条件，该材料也可操作以保持非晶态。
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9.发明申请公开(公告)号：US20140175363A1
公开(公告)日：2014-06-26
申请号：US13721476
申请日：2012-12-20
发明人： Mihir Tendulkar , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1266 , H01L45/146 , H01L45/1633
摘要： Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.
摘要翻译： 提供了形成包括电阻切换层的非易失性存储元件的方法。 一种方法包括通过退火将氧从前体层扩散到一个或多个反应电极。 存储元件中的至少一个电极是反应性的，而另一个电极可能是惰性的。 作为该扩散的结果，前体层被转换成电阻切换层。 前体层可以最初包括化学计量的氧化物，其通常在氧空位产生之前不表现出电阻转换特性。 形成这种氧化物的金属可能比形成反应性电极的金属更具电负性。 至少在退火之前，反应电极可以基本上不含氧。 在氢气存在下，可以在250-400℃下进行退火。 这些方法简化了过程控制，并且可以用于形成包括小于20埃厚的电阻开关层的非易失性存储元件。
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10.发明申请公开(公告)号：US20140151621A1
公开(公告)日：2014-06-05
申请号：US13692850
申请日：2012-12-03
发明人： Mihir Tendulkar , David Chi
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L21/28506 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L28/24 , H01L45/06 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1641
摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.
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