Invention Grant
US09181080B2 MEMS microphone with low pressure region between diaphragm and counter electrode
有权
MEMS麦克风在隔膜和对电极之间具有低压区域
- Patent Title: MEMS microphone with low pressure region between diaphragm and counter electrode
- Patent Title (中): MEMS麦克风在隔膜和对电极之间具有低压区域
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Application No.: US13931584Application Date: 2013-06-28
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Publication No.: US09181080B2Publication Date: 2015-11-10
- Inventor: Alfons Dehe , Andreas Froemel
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: B81B3/00
- IPC: B81B3/00 ; H04R23/00 ; B81C1/00 ; H04R7/02

Abstract:
A MEMS microphone includes a first diaphragm element, a counter electrode element, and a low pressure region between the first diaphragm element and the counter electrode element. The low pressure region has a pressure less than an ambient pressure.
Public/Granted literature
- US20150001647A1 MEMS Microphone with Low Pressure Region Between Diaphragm and Counter Electrode Public/Granted day:2015-01-01
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