发明授权
- 专利标题: Diffusion barrier coated substrates and methods of making the same
- 专利标题(中): 扩散阻挡涂层基材及其制备方法
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申请号: US13873156申请日: 2013-04-29
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公开(公告)号: US09183973B2公开(公告)日: 2015-11-10
- 发明人: Arvind Kamath , Michael Kocsis , Kevin McCarthy , Gloria Wong , Jiang Li
- 申请人: Arvind Kamath , Michael Kocsis , Kevin McCarthy , Gloria Wong , Jiang Li
- 申请人地址: NO Oslo
- 专利权人: Thin Film Electronics ASA
- 当前专利权人: Thin Film Electronics ASA
- 当前专利权人地址: NO Oslo
- 代理机构: Central California IP Group, P.C.
- 代理商 Andrew D. Fortney
- 主分类号: H01F5/00
- IPC分类号: H01F5/00 ; H01Q7/00 ; H01L29/786 ; H01L27/12 ; H01Q1/22 ; H01F41/04
摘要:
Devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The devices include a metal substrate, a diffusion barrier layer on the metal substrate, one or more insulator layers on the diffusion barrier layer, and an antenna and/or inductor on the one or more insulator layer(s). The method includes forming a diffusion barrier layer on the metal substrate, forming one or more insulator layers on the diffusion barrier layer; and forming an antenna and/or inductor on an uppermost one of the insulator layer(s). The antenna and/or inductor is electrically connected to at least one of the diffusion barrier layer and/or the metal substrate. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into device layers formed thereon.