Invention Grant
- Patent Title: Proximity effect correction in a charged particle lithography system
- Patent Title (中): 带电粒子光刻系统中的接近效应校正
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Application No.: US14626891Application Date: 2015-02-19
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Publication No.: US09184026B2Publication Date: 2015-11-10
- Inventor: Marco Jan-Jaco Wieland
- Applicant: Mapper Lithography IP B.V.
- Applicant Address: NL Delft
- Assignee: MAPPER LITHOGRAPHY IP B.V.
- Current Assignee: MAPPER LITHOGRAPHY IP B.V.
- Current Assignee Address: NL Delft
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01J37/30
- IPC: H01J37/30 ; H01J37/302 ; G21K5/04 ; H01J37/317 ; H01J37/04

Abstract:
The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0
Public/Granted literature
- US20150243481A1 PROXIMITY EFFECT CORRECTION IN A CHARGED PARTICLE LITHOGRAPHY SYSTEM Public/Granted day:2015-08-27
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