Invention Grant
US09184026B2 Proximity effect correction in a charged particle lithography system 有权
带电粒子光刻系统中的接近效应校正

Proximity effect correction in a charged particle lithography system
Abstract:
The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0
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