Invention Grant
- Patent Title: Edge exclusion control with adjustable plasma exclusion zone ring
- Patent Title (中): 边缘排除控制带可调等离子排阻区环
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Application No.: US13553734Application Date: 2012-07-19
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Publication No.: US09184030B2Publication Date: 2015-11-10
- Inventor: Keechan Kim , Yansung Kim
- Applicant: Keechan Kim , Yansung Kim
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: B08B3/00
- IPC: B08B3/00 ; H01J37/32

Abstract:
Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension.
Public/Granted literature
- US20140020708A1 EDGE EXCLUSION CONTROL WITH ADJUSTABLE PLASMA EXCLUSION ZONE RING Public/Granted day:2014-01-23
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