Invention Grant
- Patent Title: Semiconductor device packages including thermally insulating materials and methods of making and using such semiconductor packages
- Patent Title (中): 包括绝热材料的半导体器件封装以及制造和使用这种半导体封装的方法
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Application No.: US14334870Application Date: 2014-07-18
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Publication No.: US09184105B2Publication Date: 2015-11-10
- Inventor: Steven Groothuis , Jian Li , Shijian Luo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/22 ; H01L21/00 ; H01L23/34 ; H01L23/367 ; H01L23/31 ; H01L25/065 ; H01L23/433 ; H01L25/18
Abstract:
Semiconductor devices may include a first semiconductor die comprising a heat-generating region located at a periphery thereof. A second semiconductor die is attached to the first semiconductor die. At least a portion of the heat-generating region is located laterally outside a footprint of the second semiconductor die. A thermally insulating material is located on a side surface of the second semiconductor die. Methods of forming semiconductor devices may involve attaching a second semiconductor die to a first semiconductor die. The first semiconductor die includes a heat-generating region at a periphery thereof. At least a portion of the heat-generating region is located laterally outside a footprint of the second semiconductor die. A thermally insulating material is located on a side surface of the second semiconductor die.
Public/Granted literature
Information query
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