发明授权
US09184143B2 Semiconductor device with bump adjustment and manufacturing method thereof
有权
具有凸块调整的半导体器件及其制造方法
- 专利标题： Semiconductor device with bump adjustment and manufacturing method thereof
- 专利标题（中）： 具有凸块调整的半导体器件及其制造方法
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申请号： US14098218申请日： 2013-12-05
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公开(公告)号： US09184143B2公开(公告)日： 2015-11-10
- 发明人: Chia-Chun Miao , Shih-Wei Liang , Kai-Chiang Wu , Yen-Ping Wang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理商 Chun-Ming Shih
- 主分类号： H01L23/00
- IPC分类号： H01L23/00
摘要：
A semiconductor device having a semiconductor substrate is provided. The semiconductor device has a metal structure over the semiconductor substrate. The metal structure is configured to receive a bump. The semiconductor device further has a conductive trace between the semiconductor substrate and the metal structure. The conductive trace is configured to connect to a power source. When an electric current from the power source passes through the conductive trace, an electromagnetic field is generated at the conductive trace. The position of the bump is adjusted in response to the electromagnetic field.
公开/授权文献
- US20150162291A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 公开/授权日：2015-06-11
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