Invention Grant
- Patent Title: Method providing an epitaxial photonic device having a reduction in defects and resulting structure
- Patent Title (中): 提供具有减少缺陷和结果的外延光子器件的方法
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Application No.: US14055990Application Date: 2013-10-17
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Publication No.: US09184191B2Publication Date: 2015-11-10
- Inventor: Roy Meade
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/107 ; H01L21/00 ; H01L21/76 ; H01L27/144 ; H01L31/18 ; H01L21/64 ; H01L27/146
Abstract:
A method of forming a photonic device and resulting structure are described in which the photonic device is epitaxially grown over a substrate surface vertically, and laterally over trench isolation regions formed in the substrate surface.
Public/Granted literature
- US20150108596A1 METHOD PROVIDING AN EPITAXIAL PHOTONIC DEVICE HAVING A REDUCTION IN DEFECTS AND RESULTING STRUCTURE Public/Granted day:2015-04-23
Information query
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