Semiconductor structures and fabrication methods are provided having a bridging film which facilitates adherence of both an underlying layer of dielectric material and an overlying stress-inducing layer. The method includes, for instance, providing a layer of dielectric material, with at least one gate structure disposed therein, over a semiconductor substrate; providing a bridging film over the layer of dielectric material with the at least one gate structure; and providing a stress-inducing layer over the bridging film. The bridging film is selected to facilitate adherence of both the underlying layer of dielectric material and the overlying stress-inducing layer by, in part, forming a chemical bond with the layer of dielectric material, without forming a chemical bond with the stress-inducing layer.