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US09184293B2 Methods of fabricating semiconductor devices having punch-through stopping regions 有权
制造具有穿通停止区域的半导体器件的方法

Methods of fabricating semiconductor devices having punch-through stopping regions
Abstract:
Methods of fabricating semiconductor devices are provided including providing a substrate having a first region and a second region, the substrate defining trenches in the first and second regions; forming active fins on the first and second regions, the active fins protruding from the trenches in the first and second regions; forming spacers on sidewalls of the active fins in the first and second regions; recessing floors of the trenches under the spacers to provide extensions of the active fins; implanting impurities of a first type in the extensions of the active fins in the first region; and implanting impurities of a second, type, different from the first type, in the extensions of the active fins in the second region.
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