Invention Grant
- Patent Title: Methods of fabricating semiconductor devices having punch-through stopping regions
- Patent Title (中): 制造具有穿通停止区域的半导体器件的方法
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Application No.: US14454943Application Date: 2014-08-08
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Publication No.: US09184293B2Publication Date: 2015-11-10
- Inventor: Jong-Un Kim , Hyun-Seung Song , Dong-Hyun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2013-0094775 20130809
- Main IPC: H01L27/20
- IPC: H01L27/20 ; H01L29/78 ; H01L21/266 ; H01L21/8238 ; H01L27/092

Abstract:
Methods of fabricating semiconductor devices are provided including providing a substrate having a first region and a second region, the substrate defining trenches in the first and second regions; forming active fins on the first and second regions, the active fins protruding from the trenches in the first and second regions; forming spacers on sidewalls of the active fins in the first and second regions; recessing floors of the trenches under the spacers to provide extensions of the active fins; implanting impurities of a first type in the extensions of the active fins in the first region; and implanting impurities of a second, type, different from the first type, in the extensions of the active fins in the second region.
Public/Granted literature
- US20150044829A1 Methods of Fabricating Semiconductor Devices Having Punch-Through Stopping Regions Public/Granted day:2015-02-12
Information query
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