发明授权
- 专利标题： Planar and nanowire field effect transistors
- 专利标题（中）： 平面和纳米线场效应晶体管
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申请号： US13600598申请日： 2012-08-31
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公开(公告)号： US09184301B2公开(公告)日： 2015-11-10
- 发明人: Sarunya Bangsaruntip , Guy M. Cohen , Shreesh Narasimha , Jeffrey W. Sleight
- 申请人： Sarunya Bangsaruntip , Guy M. Cohen , Shreesh Narasimha , Jeffrey W. Sleight
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Cantor Colburn LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/786 ; B82Y10/00 ; B82Y40/00 ; H01L21/84 ; H01L27/12 ; H01L29/06 ; H01L29/423
摘要：
An integrated circuit includes a plurality of gate-all-around (GAA) nanowire field effect transistors (FETs), a plurality of omega-gate nanowire FETs, and a plurality of planar channel FETs, wherein the plurality of GAA FETs, the plurality of omega-gate nanowire FETs, and the plurality of planar channel FETs are disposed on a single wafer.
公开/授权文献
- US20120319084A1 PLANAR AND NANOWIRE FIELD EFFECT TRANSISTORS 公开/授权日：2012-12-20