Invention Grant
- Patent Title: Memory cells and methods of forming memory cells
- Patent Title (中): 记忆细胞和形成记忆细胞的方法
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Application No.: US14285933Application Date: 2014-05-23
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Publication No.: US09184384B2Publication Date: 2015-11-10
- Inventor: Gurtej S. Sandhu , Scott E. Sills
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
Some embodiments include methods of forming memory cells. An opening is formed over a first conductive structure to expose an upper surface of the first conductive structure. The opening has a bottom level with a bottom width. The opening has a second level over the bottom level, with the second level having a second width which is greater than the bottom width. The bottom level of the opening is filled with a first portion of a multi-portion programmable material, and the second level is lined with the first portion. The lined second level is filled with a second portion of the multi-portion programmable material. A second conductive structure is formed over the second portion. Some embodiments include memory cells.
Public/Granted literature
- US20140252303A1 Memory Cells and Methods of Forming Memory Cells Public/Granted day:2014-09-11
Information query
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