Invention Grant
- Patent Title: Variable resistance memory device and related method of operation
- Patent Title (中): 可变电阻存储器件及相关操作方法
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Application No.: US13693093Application Date: 2012-12-04
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Publication No.: US09190143B2Publication Date: 2015-11-17
- Inventor: Cheon An Lee , Donghun Kwak , Ingyu Baek
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwons-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwons-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0017407 20120221
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
A method of operating a variable resistance memory device comprises determining a level of an access voltage based on a number of rows or columns of a cell array, and supplying the access voltage having the determined level to the cell array.
Public/Granted literature
- US20130215666A1 VARIABLE RESISTANCE MEMORY DEVICE AND RELATED METHOD OF OPERATION Public/Granted day:2013-08-22
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