Invention Grant
US09190360B2 Photoresist collapse method for forming a physical unclonable function
有权
用于形成物理不可克隆功能的光刻胶折叠法
- Patent Title: Photoresist collapse method for forming a physical unclonable function
- Patent Title (中): 用于形成物理不可克隆功能的光刻胶折叠法
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Application No.: US14181960Application Date: 2014-02-17
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Publication No.: US09190360B2Publication Date: 2015-11-17
- Inventor: Kai D. Feng , Wai-Kin Li , Ping-Chuan Wang , Zhijian Yang
- Applicant: International Business Machines Corporation
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/544 ; H01L21/3105 ; H01L23/522 ; H01L23/538

Abstract:
An organic material layer is lithographically patterned to include a linear array portion of lines and spaces. In one embodiment, the organic material layer can be an organic planarization layer that is patterned employing a photoresist layer, which is consumed during patterning of the organic planarization layer. Volume expansion of the organic planarization layer upon exposure to a halogen-including gas causes portions of the linear array to collapse at random locations. In another embodiment, the height of the photoresist layer is selected such that the linear array portion of the photoresist layer is mechanically unstable and produces random photoresist collapses. The pattern including random modifications due to the collapse of the organic material layer is transferred into an underlying layer to generate an array of conductive material lines with random electrical disruption of shorts or opens. The structure with random shorts can be employed as a physical unclonable function.
Public/Granted literature
- US20150235964A1 PHOTORESIST COLLAPSE METHOD FOR FORMING A PHYSICAL UNCLONABLE FUNCTION Public/Granted day:2015-08-20
Information query
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