Invention Grant
- Patent Title: CMOS image sensor with reset shield line
- Patent Title (中): 具有复位屏蔽线的CMOS图像传感器
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Application No.: US13858833Application Date: 2013-04-08
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Publication No.: US09190434B2Publication Date: 2015-11-17
- Inventor: Sohei Manabe
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113 ; H01L27/146 ; H04N5/335
Abstract:
Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.
Public/Granted literature
- US20140299925A1 CMOS IMAGE SENSOR WITH RESET SHIELD LINE Public/Granted day:2014-10-09
Information query
IPC分类:
