Invention Grant
US09190467B2 Semiconductor structure and manufacturing method of the same 有权
半导体结构及其制造方法相同

Semiconductor structure and manufacturing method of the same
Abstract:
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a stacked strip structure, and a tensile material strip. The stacked strip structure is formed vertically on the substrate, the stacked strip structure having compressive stress. The stacked strip structure comprises a plurality of conductive strips and a plurality of insulating strips, and the conductive strips and the insulating strips are interlaced. The tensile material strip is formed on the stacked strip structure, the tensile material strip having tensile stress.
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