Invention Grant
- Patent Title: Semiconductor structure and manufacturing method of the same
- Patent Title (中): 半导体结构及其制造方法相同
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Application No.: US14149873Application Date: 2014-01-08
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Publication No.: US09190467B2Publication Date: 2015-11-17
- Inventor: Erh-Kun Lai , Guan-Ru Lee , An-Chyi Wei , Hang-Ting Lue
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/115 ; H01L29/78 ; H01L29/40

Abstract:
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a stacked strip structure, and a tensile material strip. The stacked strip structure is formed vertically on the substrate, the stacked strip structure having compressive stress. The stacked strip structure comprises a plurality of conductive strips and a plurality of insulating strips, and the conductive strips and the insulating strips are interlaced. The tensile material strip is formed on the stacked strip structure, the tensile material strip having tensile stress.
Public/Granted literature
- US20150194481A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2015-07-09
Information query
IPC分类: