A dielectric metal compound liner can be deposited on a semiconductor fin prior to formation of a disposable gate structure. The dielectric metal compound liner protects the semiconductor fin during the pattering of the disposable gate structure and a gate spacer. The dielectric metal compound liner can be removed prior to formation of source and drain regions and a replacement gate structure. Alternately, a dielectric metal compound liner can be deposited on a semiconductor fin and a gate stack, and can be removed after formation of a gate spacer. Further, a dielectric metal compound liner can be deposited on a semiconductor fin and a disposable gate structure, and can be removed after formation of a gate spacer and removal of the disposable gate structure. The dielectric metal compound liner can protect the semiconductor fin during formation of the gate spacer in each embodiment.