- 专利标题： Nonplanar device with thinned lower body portion and method of fabrication
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申请号： US14273373申请日： 2014-05-08
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公开(公告)号： US09190518B2公开(公告)日： 2015-11-17
- 发明人: Uday Shah , Brian S. Doyle , Justin K. Brask , Robert S. Chau , Thomas A. Letson
- 申请人： Uday Shah , Brian S. Doyle , Justin K. Brask , Robert S. Chau , Thomas A. Letson
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L27/088 ; H01L27/12 ; H01L21/8234 ; H01L21/84 ; H01L29/423
摘要：
A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.
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