Invention Grant
- Patent Title: Passive device cell and fabrication process thereof
- Patent Title (中): 被动器件电池及其制造工艺
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Application No.: US13804206Application Date: 2013-03-14
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Publication No.: US09190976B2Publication Date: 2015-11-17
- Inventor: Ming-Tzong Yang , Cheng-Chou Hung , Tung-Hsing Lee , Wei-Che Huang
- Applicant: MediaTek Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H03H7/01
- IPC: H03H7/01 ; H03H3/00 ; H01P1/203 ; H01P7/08
Abstract:
An embodiment of the invention provides a passive device cell. The passive device cell has a substrate layer, a passive device, and an intermediary layer formed between the substrate layer and the passive device. The intermediary layer includes a plurality of LC resonators.
Public/Granted literature
- US20130265121A1 PASSIVE DEVICE CELL AND FABRICATION PROCESS THEREOF Public/Granted day:2013-10-10
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