Invention Grant
US09192910B2 Process for producing nitride crystal, nitride crystal and apparatus for producing same
有权
氮化物晶体的制造方法，氮化物晶体及其制造装置
- Patent Title: Process for producing nitride crystal, nitride crystal and apparatus for producing same
- Patent Title (中): 氮化物晶体的制造方法，氮化物晶体及其制造装置
-
Application No.: US13143094Application Date: 2010-01-07
-
Publication No.: US09192910B2Publication Date: 2015-11-24
- Inventor: Yutaka Mikawa , Makiko Kiyomi , Yuji Kagamitani , Toru Ishiguro
- Applicant: Yutaka Mikawa , Makiko Kiyomi , Yuji Kagamitani , Toru Ishiguro
- Applicant Address: JP Tokyo JP Sendai-shi
- Assignee: Mitsubishi Chemical Corporation,Tohoku University
- Current Assignee: Mitsubishi Chemical Corporation,Tohoku University
- Current Assignee Address: JP Tokyo JP Sendai-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-002189 20090108; JP2009-195856 20090826
- International Application: PCT/JP2010/050118 WO 20100107
- International Announcement: WO2010/079814 WO 20100715
- Main IPC: B01J19/02
- IPC: B01J19/02 ; C30B7/10 ; C30B29/40 ; H01L21/02
Abstract:
To grow a highly pure nitride crystal having a low oxygen concentration efficiently by an ammonothermal method.A process for producing a nitride crystal, which comprises bringing a reactant gas reactive with ammonia to form a mineralizer, and ammonia into contact with each other to prepare a mineralizer in a reactor or in a closed circuit connected to a reactor; and growing a nitride crystal by an ammonothermal method in the presence of the ammonia and the mineralizer.
Public/Granted literature
- US20110268645A1 PROCESS FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING SAME Public/Granted day:2011-11-03
Information query
