Invention Grant
- Patent Title: Inertial and pressure sensors on single chip
- Patent Title (中): 惯性和压力传感器在单芯片上
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Application No.: US14447696Application Date: 2014-07-31
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Publication No.: US09194882B2Publication Date: 2015-11-24
- Inventor: Ando Feyh , Gary O'Brien
- Applicant: Robert Bosch GmbH
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Maginot Moore & Beck LLP
- Main IPC: B81B3/00
- IPC: B81B3/00 ; G01P15/08 ; G01P15/14 ; G01P1/02 ; G01P15/125 ; G01L1/14 ; G01L1/18

Abstract:
In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing.
Public/Granted literature
- US20150035093A1 INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP Public/Granted day:2015-02-05
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