Invention Grant
US09195136B2 Resist underlayer composition, method of forming patterns and semiconductor integrated circuit device including the patterns
有权
抗蚀剂底层组合物，形成图案的方法和包括图案的半导体集成电路器件
- Patent Title: Resist underlayer composition, method of forming patterns and semiconductor integrated circuit device including the patterns
- Patent Title (中): 抗蚀剂底层组合物，形成图案的方法和包括图案的半导体集成电路器件
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Application No.: US14088509Application Date: 2013-11-25
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Publication No.: US09195136B2Publication Date: 2015-11-24
- Inventor: Hyo-Young Kwon , Min-Gyum Kim , Jun-Ho Lee , Hwan-Sung Cheon
- Applicant: Hyo-Young Kwon , Min-Gyum Kim , Jun-Ho Lee , Hwan-Sung Cheon
- Applicant Address: KR Gumi-si, Kyeongsangbuk-do
- Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee Address: KR Gumi-si, Kyeongsangbuk-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0046363 20130425
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; G03F7/09
Abstract:
A resist underlayer composition, a method of forming patterns, and semiconductor integrated circuit device, the composition including a solvent; and a compound including a moiety represented by the following Chemical Formula 1:
Public/Granted literature
Information query
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