Invention Grant
US09196478B2 Graphene transferring methods, device manufacturing method using the same, and substrate structures including graphene
有权
石墨烯转移方法,使用其的器件制造方法以及包括石墨烯的衬底结构
- Patent Title: Graphene transferring methods, device manufacturing method using the same, and substrate structures including graphene
- Patent Title (中): 石墨烯转移方法,使用其的器件制造方法以及包括石墨烯的衬底结构
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Application No.: US14268053Application Date: 2014-05-02
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Publication No.: US09196478B2Publication Date: 2015-11-24
- Inventor: Joo-ho Lee , Yong-sung Kim , Chang-youl Moon , Sung-hee Lee , Chang-seung Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2013-0051500 20130507
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/16 ; H01L21/20

Abstract:
Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.
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