公开(公告)号：US09337029B2

公开(公告)日：2016-05-10

申请号：US14682820

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Yeon-hee Kim ,  Chang-youl Moon ,  Yong-young Park

IPC: H01L21/302 ,  H01L21/02 ,  H01L29/20 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L21/0254 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/30604 ,  H01L21/3081 ,  H01L29/2003

Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.

公开(公告)号：US09515189B2

公开(公告)日：2016-12-06

申请号：US14879423

申请日：2015-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Woo-young Yang ,  Chang-youl Moon ,  Yong-young Park ,  Jeong-yub Lee

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L21/02 ,  H01L29/66 ,  H01L29/868

CPC classification number: H01L29/78603 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02672 ,  H01L29/04 ,  H01L29/045 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66136 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/868

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

公开(公告)号：US09082844B2

公开(公告)日：2015-07-14

申请号：US14077956

申请日：2013-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-hyoung Cho ,  Jun-Hee Choi ,  Jin-seung Sohn ,  Chang-youl Moon

IPC: H01L21/00 ,  H01L21/78 ,  H01L33/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/82 ,  H01L33/02 ,  H01L33/32

CPC classification number: H01L21/7806 ,  H01L21/02343 ,  H01L21/28 ,  H01L21/82 ,  H01L23/3192 ,  H01L27/153 ,  H01L31/035281 ,  H01L31/03926 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  H01L31/1896 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016 ,  H01S5/0217 ,  H01S5/32341 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.

Abstract translation: 本公开涉及将半导体元件从非柔性基板转移到柔性基板的方法。 本公开还涉及一种基于传送半导体元件的方法制造柔性半导体器件的方法。 在非柔性基板上生长或形成的半导体元件可以有效地转移到树脂层，同时保持半导体元件的布置。 树脂层可以用作用于支撑垂直半导体元件的柔性基板。

公开(公告)号：US09196478B2

公开(公告)日：2015-11-24

申请号：US14268053

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Yong-sung Kim ,  Chang-youl Moon ,  Sung-hee Lee ,  Chang-seung Lee

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L21/20

CPC classification number: H01L21/02527 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/2007 ,  H01L29/1606 ,  H01L29/66015

Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Abstract translation: 石墨烯转移方法，使用其的器件制造方法和包括石墨烯的衬底结构包括在第一衬底上形成催化剂层，在催化剂层上形成石墨烯层，在石墨烯层上形成保护金属层， 将保护金属层，石墨烯层和催化剂层保留在支撑体上，从支撑体除去催化剂层，将保护金属层和保护金属层转移到保护金属层， 石墨烯层从支撑体到第二基底。

公开(公告)号：US08877572B2

公开(公告)日：2014-11-04

申请号：US13790534

申请日：2013-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Yong-seok Jung ,  Yong-sung Kim ,  Chang-seung Lee ,  Chang-youl Moon

IPC: H01L29/66 ,  C25D17/00 ,  C01B31/02 ,  C25B9/00 ,  C25F7/00 ,  C25B1/00 ,  C25F5/00 ,  B82Y40/00

CPC classification number: H01L29/66045 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/05 ,  C01B32/186 ,  C25B1/00 ,  C25B9/00 ,  C25D17/00 ,  C25F5/00 ,  C25F7/00

Abstract: A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.

Abstract translation: 石墨烯装置制造装置包括电极，在基板上形成有金属催化剂层的石墨烯结构，保护层和保护层与金属催化剂层之间的石墨烯层，功率单元，被配置为在保护层和金属催化剂层之间施加电压 电极和金属催化剂层，以及其中石墨烯结构至少部分浸没的电解质。

公开(公告)号：US20160035898A1

公开(公告)日：2016-02-04

申请号：US14879423

申请日：2015-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Woo-young Yang ,  Chang-youl Moon ,  Yong-young Park ,  Jeong-yub Lee

IPC: H01L29/786 ,  H01L29/161 ,  H01L29/45 ,  H01L29/16 ,  H01L29/04

CPC classification number: H01L29/78603 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02672 ,  H01L29/04 ,  H01L29/045 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66136 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/868

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract translation: 使用金属氧化物的半导体器件的制造方法包括在基板上形成金属氧化物层，在金属氧化物层上形成非晶质半导体层，通过使用金属氧化物层使非晶半导体层结晶而形成多晶半导体层。

公开(公告)号：US09029860B2

公开(公告)日：2015-05-12

申请号：US13848281

申请日：2013-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Yeon-hee Kim ,  Chang-youl Moon ,  Yong-young Park

IPC: H01L29/00 ,  H01L21/02 ,  H01L29/20

CPC classification number: H01L21/0254 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/30604 ,  H01L21/3081 ,  H01L29/2003

Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.

Abstract translation: 一种结构包括硅衬底，硅衬底上的多个硅棒，多个硅棒上的硅层，以及硅层上的GaN衬底。

公开(公告)号：US09293596B2

公开(公告)日：2016-03-22

申请号：US14642326

申请日：2015-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wenxu Xianyu ,  Chang-youl Moon ,  Jeong-yub Lee ,  Chang-seung Lee

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/16

CPC classification number: H01L29/78684 ,  H01L27/1266 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78603

Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

公开(公告)号：US09184052B2

公开(公告)日：2015-11-10

申请号：US13949588

申请日：2013-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Woo-young Yang ,  Chang-youl Moon ,  Yong-young Park ,  Jeong-yub Lee

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786 ,  H01L29/868

CPC classification number: H01L29/78603 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02672 ,  H01L29/04 ,  H01L29/045 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66136 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/868

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract translation: 使用金属氧化物的半导体器件的制造方法包括在基板上形成金属氧化物层，在金属氧化物层上形成非晶质半导体层，通过使用金属氧化物层使非晶半导体层结晶而形成多晶半导体层。

公开(公告)号：US20150214037A1

公开(公告)日：2015-07-30

申请号：US14682820

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Yeon-hee Kim ,  Chang-youl Moon ,  Yong-young Park

IPC: H01L21/02 ,  H01L21/308 ,  H01L29/20 ,  H01L21/306

CPC classification number: H01L21/0254 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/30604 ,  H01L21/3081 ,  H01L29/2003

Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.

Abstract translation: 一种结构包括硅衬底，硅衬底上的多个硅棒，多个硅棒上的硅层，以及硅层上的GaN衬底。