发明授权
US09196614B2 Inverted III-nitride P-channel field effect transistor with hole carriers in the channel
有权
反向III族氮化物P沟道场效应晶体管在通道中具有空穴载流子
- 专利标题: Inverted III-nitride P-channel field effect transistor with hole carriers in the channel
- 专利标题(中): 反向III族氮化物P沟道场效应晶体管在通道中具有空穴载流子
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申请号: US14617510申请日: 2015-02-09
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公开(公告)号: US09196614B2公开(公告)日: 2015-11-24
- 发明人: Francis J. Kub , Travis J. Anderson , Andrew D. Koehler , Karl D. Hobart
- 申请人: Francis J. Kub , Travis J. Anderson , Andrew D. Koehler , Karl D. Hobart
- 申请人地址: US DC Washington
- 专利权人: The United States of America, as represented by the Secretary of the Navy
- 当前专利权人: The United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址: US DC Washington
- 代理机构: US Naval Research Laboratory
- 代理商 Stephen T. Hunnius
- 主分类号: H01L27/095
- IPC分类号: H01L27/095 ; H01L29/78 ; H01L29/20 ; H01L29/66 ; H01L29/417 ; H01L29/778 ; H01L29/10 ; H01L21/285 ; H01L29/45 ; H01L29/205 ; H01L21/8228 ; H01L21/8238 ; H01L27/092 ; H01L29/04 ; H01L29/201 ; H01L29/36 ; H01L21/8252 ; H01L21/02 ; H01L21/265 ; H01L21/306 ; H01L21/3065 ; H01L21/762 ; H01L29/207 ; H01L29/16 ; H01L29/423 ; H01L29/51
摘要:
An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride barrier material, a second material layer, a two-dimensional hole gas in the second layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.