发明授权
- 专利标题： Semiconductor devices having carbon-contained porous insulation over gate stack structures
- 专利标题（中）： 半导体器件在栅极堆叠结构上具有含碳多孔绝缘
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申请号： US14519821申请日： 2014-10-21
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公开(公告)号： US09196630B2公开(公告)日： 2015-11-24
- 发明人: Bo-Young Lee , Jongwan Choi , Myoungbum Lee
- 申请人： Bo-Young Lee , Jongwan Choi , Myoungbum Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce
- 优先权： KR10-2011-0088588 20110901
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/115 ; H01L21/764 ; H01L21/762 ; H01L23/528 ; H01L23/532
摘要：
Semiconductor devices, and methods of fabricating the same, include forming a trench between a plurality of patterns on a substrate to be adjacent to each other, forming a first sacrificial layer in the trench, forming a first porous insulation layer having a plurality of pores on the plurality of patterns and on the first sacrificial layer, and removing the first sacrificial layer through the plurality of pores of the first porous insulation layer to form a first air gap between the plurality of patterns and under the first porous insulation layer.
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