发明授权
- 专利标题： Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same
- 专利标题（中）： 包括主活性层和次活性层的薄膜晶体管及其制造方法
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申请号： US13487409申请日： 2012-06-04
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公开(公告)号： US09196746B2公开(公告)日： 2015-11-24
- 发明人: Hong-Long Ning , Byeong-Beom Kim , Chang-Oh Jeong , Sang-Won Shin , Hyeong-Suk Yoo , Xin-Xing Li , Joon-Yong Park , Hyun-Ju Kang , Su-Kyoung Yang , Kyung-Seop Kim
- 申请人： Hong-Long Ning , Byeong-Beom Kim , Chang-Oh Jeong , Sang-Won Shin , Hyeong-Suk Yoo , Xin-Xing Li , Joon-Yong Park , Hyun-Ju Kang , Su-Kyoung Yang , Kyung-Seop Kim
- 申请人地址： KR
- 专利权人： SAMSUNG DISPLAY CO., LTD.
- 当前专利权人： SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址： KR
- 代理机构： Cantor Colburn LLP
- 优先权： KR10-2011-0129148 20111205
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/786
摘要：
A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.