Invention Grant
US09202874B2 Gallium nitride (GaN) device with leakage current-based over-voltage protection
有权
具有漏电流的过电压保护的氮化镓（GaN）器件
- Patent Title: Gallium nitride (GaN) device with leakage current-based over-voltage protection
- Patent Title (中): 具有漏电流的过电压保护的氮化镓（GaN）器件
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Application No.: US13957698Application Date: 2013-08-02
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Publication No.: US09202874B2Publication Date: 2015-12-01
- Inventor: Andrew P. Ritenour
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/423 ; H01L29/778
Abstract:
A gallium nitride (GaN) device with leakage current-based over-voltage protection is disclosed. The GaN device includes a drain and a source disposed on a semiconductor substrate. The GaN device also includes a first channel region within the semiconductor substrate and between the drain and the source. The GaN device further includes a second channel region within the semiconductor substrate and between the drain and the source. The second channel region has an enhanced drain induced barrier lowering (DIBL) that is greater than the DIBL of the first channel region. As a result, a drain voltage will be safely clamped below a destructive breakdown voltage once a substantial drain current begins to flow through the second channel region.
Public/Granted literature
- US20140054601A1 GALLIUM NITRIDE (GAN) DEVICE WITH LEAKAGE CURRENT-BASED OVER-VOLTAGE PROTECTION Public/Granted day:2014-02-27
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