Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14508776Application Date: 2014-10-07
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Publication No.: US09209123B2Publication Date: 2015-12-08
- Inventor: Teruhiro Kuwajima
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-218037 20131021
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/4763 ; H01L23/498 ; H01L21/768

Abstract:
Both enhancement of embeddability of a wiring groove and suppression of the generation of a coupling failure between a wiring and a coupling member are simultaneously achieved. In a cross-section perpendicular to a direction passing through the contact and a direction in which the second wiring extends, the center of the contact is more close to a first side surface of the second wiring than the center of the second wiring. In addition, when a region where the first side surface of the second wiring overlaps the contact in the direction in which the second wiring extends, is set to be an overlapping region, at least the lower part of the overlapping region has an inclination steeper than that of other portions of the side surface of the second wiring.
Public/Granted literature
- US20150108655A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-04-23
Information query
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