发明授权
- 专利标题: Formation of through via before contact processing
- 专利标题(中): 在联系处理之前形成通孔
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申请号: US13074883申请日: 2011-03-29
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公开(公告)号: US09209157B2公开(公告)日: 2015-12-08
- 发明人: Wen-Chih Chiou , Chen-Hua Yu , Weng-Jin Wu
- 申请人: Wen-Chih Chiou , Chen-Hua Yu , Weng-Jin Wu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L25/065 ; H01L21/768 ; H01L23/48 ; H01L25/00
摘要:
The formation of through silicon vias (TSVs) in an integrated circuit (IC) die or wafer is described in which the TSV is formed in the integration process prior to contact or metallization processing. Contacts and bonding pads may then be fabricated after the TSVs are already in place, which allows the TSV to be more dense and allows more freedom in the overall TSV design. By providing a denser connection between TSVs and bonding pads, individual wafers and dies may be bonded directly at the bonding pads. The conductive bonding material, thus, maintains an electrical connection to the TSVs and other IC components through the bonding pads.
公开/授权文献
- US20110177655A1 Formation of Through Via before Contact Processing 公开/授权日:2011-07-21