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US09209177B2 Semiconductor devices including gates and dummy gates of different materials 有权
半导体器件包括不同材料的栅极和虚拟栅极

Semiconductor devices including gates and dummy gates of different materials
Abstract:
Semiconductor devices are provided. The semiconductor devices may include an active pattern and a insulation layer. The semiconductor devices may include a gate that is on the active pattern and that includes a first material, and a dummy gate that is on the insulation layer and that includes a second material different from the first material.
Abstract(Chinese):

提供半导体器件。 半导体器件可以包括有源图案和绝缘层。 半导体器件可以包括位于有源图案上的并且包括第一材料的栅极和位于绝缘层上并且包括不同于第一材料的第二材料的伪栅极。

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