Invention Grant
- Patent Title: Photosensitive material and method of lithography
- Patent Title (中): 感光材料和光刻方法
-
Application No.: US13486697Application Date: 2012-06-01
-
Publication No.: US09213234B2Publication Date: 2015-12-15
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/11

Abstract:
Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.
Public/Granted literature
- US20130323641A1 PHOTOSENSTIVE MATERIAL AND METHOD OF LITHOGRAPHY Public/Granted day:2013-12-05
Information query
IPC分类: