Invention Grant
US09214214B2 Physically unclonable function based on the random logical state of magnetoresistive random-access memory
有权
基于磁阻随机存取存储器的随机逻辑状态的物理不可克隆功能
- Patent Title: Physically unclonable function based on the random logical state of magnetoresistive random-access memory
- Patent Title (中): 基于磁阻随机存取存储器的随机逻辑状态的物理不可克隆功能
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Application No.: US14072634Application Date: 2013-11-05
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Publication No.: US09214214B2Publication Date: 2015-12-15
- Inventor: Xiaochun Zhu , Steven M. Millendorf , Xu Guo , David M. Jacobson , Kangho Lee , Seung H. Kang , Matthew Michael Nowak
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H04L9/30 ; H04L9/32
Abstract:
One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.
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