Invention Grant
- Patent Title: Semiconductor constructions and methods of forming electrically conductive contacts
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Application No.: US14788960Application Date: 2015-07-01
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Publication No.: US09214386B2Publication Date: 2015-12-15
- Inventor: Zengtao T. Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/768 ; H01L23/532 ; H01L23/522 ; H01L23/528
Abstract:
Some embodiments include methods of forming electrically conductive contacts. An opening is formed through an insulative material to a conductive structure. A conductive plug is formed within a bottom region of the opening. A spacer is formed to line a lateral periphery of an upper region of the opening, and to leave an inner portion of an upper surface of the plug exposed. A conductive material is formed against the inner portion of the upper surface of the plug. Some embodiments include semiconductor constructions having a conductive plug within an insulative stack and against a copper-containing material. A spacer is over an outer portion of an upper surface of the plug and not directly above an inner portion of the upper surface. A conductive material is over the inner portion of the upper surface of the plug and against an inner lateral surface of the spacer.
Public/Granted literature
- US20150303100A1 Semiconductor Constructions and Methods of Forming Electrically Conductive Contacts Public/Granted day:2015-10-22
Information query
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