Invention Grant
- Patent Title: Thin-film-transistor array substrate and manufacturing method thereof
- Patent Title (中): 薄膜晶体管阵列基板及其制造方法
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Application No.: US14487129Application Date: 2014-09-16
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Publication No.: US09214483B2Publication Date: 2015-12-15
- Inventor: Tsunglung Chang
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- Agent Mark M. Friedman
- Priority: CN201110189950 20110707
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G02F1/13 ; G02F1/1362 ; H01L27/12 ; H01L29/417 ; H01L29/786 ; H01L21/44 ; G02F1/1368

Abstract:
The present invention discloses a thin-film-transistor array substrate and a manufacturing method thereof. The array substrate includes a thin-film transistor and a compensation electrode. A gate electrode of the thin-film transistor is a portion of a scan-signal line and has an opening, and the opening extends to a side of the scan-signal line. A drain electrode of the thin-film transistor is disposed correspondingly to the opening. A source electrode of the thin-film transistor extends from a side of a data-signal line and surrounds the drain electrode. The compensation electrode extends from another side of the scan-signal line and corresponds to the gate electrode. Therefore, the present invention is capable of reducing parasitic capacitance between the drain electrode and the gate electrode without increasing the resistance value of the scan-signal line.
Public/Granted literature
- US20150004759A1 Thin-Film-Transistor Array Substrate and Manufacturing Method Thereof Public/Granted day:2015-01-01
Information query
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