Invention Grant
US09218939B2 Focused ion beam system, sample processing method using the same, and sample processing program using focused ion beam
有权
聚焦离子束系统,使用其的样品处理方法以及使用聚焦离子束的样品处理程序
- Patent Title: Focused ion beam system, sample processing method using the same, and sample processing program using focused ion beam
- Patent Title (中): 聚焦离子束系统,使用其的样品处理方法以及使用聚焦离子束的样品处理程序
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Application No.: US14221548Application Date: 2014-03-21
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Publication No.: US09218939B2Publication Date: 2015-12-22
- Inventor: Tatsuya Asahata , Shota Torikawa
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2013-061671 20130325
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/305 ; H01J37/30

Abstract:
A focused ion beam system includes a focused ion beam irradiation mechanism which irradiates a sample, on which a protective film is formed, with a focused ion beam from above the sample, a processing control unit which performs a removal process on both sides of a region to be a thin piece portion of the sample by the focused ion beam and sequentially forms observation surfaces parallel to an irradiation direction of the focused ion beam so as to achieve the thin piece portion, and an observation surface image generation unit which generates an observation surface image. The processing control unit terminates the removal process when a height of the protective film in the irradiation direction of the focused ion beam becomes a predetermined threshold value or less in the observation surface image.
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