Invention Grant
US09218980B2 Surface treatment to improve CCTBA based CVD co nucleation on dielectric substrate
有权
表面处理以改善电介质基底上的基于CCTBA的CVD共核成核
- Patent Title: Surface treatment to improve CCTBA based CVD co nucleation on dielectric substrate
- Patent Title (中): 表面处理以改善电介质基底上的基于CCTBA的CVD共核成核
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Application No.: US14026147Application Date: 2013-09-13
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Publication No.: US09218980B2Publication Date: 2015-12-22
- Inventor: Bhushan N. Zope , Avgerinos V. Gelatos
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/285 ; C23C14/22 ; C23C16/18 ; C23C16/50 ; H01L21/768 ; C23C16/02
Abstract:
Embodiments of the present invention generally relate to a method of forming a cobalt layer on a dielectric material without incubation delay. Prior to depositing the cobalt layer using CVD, the surface of the dielectric material is pretreated at a temperature between 100° C. and 250° C. Since the subsequent CVD cobalt process is also performed at between 100° C. and 250° C., one processing chamber is used for pretreating the dielectric material and forming of the cobalt layer. The combination of processing steps enables use of two processing chambers to deposit cobalt.
Public/Granted literature
- US20150079784A1 SURFACE TREATMENT TO IMPROVE CCTBA BASED CVD CO NUCLEATION ON DIELECTRIC SUBSTRATE Public/Granted day:2015-03-19
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