Invention Grant
- Patent Title: Hydrogen passivation of integrated circuits
- Patent Title (中): 集成电路的氢钝化
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Application No.: US14066298Application Date: 2013-10-29
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Publication No.: US09218981B2Publication Date: 2015-12-22
- Inventor: Gul B. Basim , Scott R. Summerfelt , Ted S. Moise
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Frank D. Cimino
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/02 ; H01L21/768 ; H01L29/66 ; H01L29/78
Abstract:
An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an integrated circuit having a hydrogen or deuterium releasing layer. Method for forming an integrated circuit having a passivation trapping layer.
Public/Granted literature
- US20140051234A1 HYDROGEN PASSIVATION OF INTEGRATED CIRCUITS Public/Granted day:2014-02-20
Information query
IPC分类:
