Invention Grant
- Patent Title: Semiconductor system and device
- Patent Title (中): 半导体系统和器件
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Application No.: US13623756Application Date: 2012-09-20
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Publication No.: US09219005B2Publication Date: 2015-12-22
- Inventor: Zvi Or-Bach , Deepak Sekar , Brian Cronquist , Ze'ev Wurman
- Applicant: Monolithic 3D Inc.
- Applicant Address: US CA San Jose
- Assignee: MONOLITHIC 3D INC.
- Current Assignee: MONOLITHIC 3D INC.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/762 ; H01L23/544 ; H01L21/683 ; H01L27/06 ; H01L27/092 ; B82Y10/00 ; H01L21/84 ; H01L29/66 ; H01L27/02 ; H01L29/78 ; H01L27/105 ; H01L27/108 ; H01L29/788 ; H01L29/792 ; H01L27/11 ; H01L27/115 ; H01L27/118 ; H01L27/12 ; G11C16/04 ; G11C16/10 ; H01L29/786 ; H01L29/10 ; H01L23/00 ; H01L25/065 ; H01L27/088 ; G11C11/41 ; G11C17/18 ; G11C29/32 ; G11C29/44

Abstract:
A 3D IC based mobile system including: a first semiconductor layer including first mono-crystallized transistors, where the first mono-crystallized transistors are interconnected by at least one metal layer including aluminum or copper; a second layer including second mono-crystallized transistors and overlaying the at least one metal layer, where the at least one metal layer is in-between the first semiconductor layer and the second layer; a plurality of thermal paths between the second mono-crystallized transistors and a heat removal apparatus, where at least one of the plurality of thermal paths includes a thermal contact adapted to conduct heat and not conduct electricity; and a heat spreader layer between the second layer and the at least one metal layer.
Public/Granted literature
- US20130020707A1 NOVEL SEMICONDUCTOR SYSTEM AND DEVICE Public/Granted day:2013-01-24
Information query
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