Invention Grant
- Patent Title: Integrated circuit with semiconductor fin fuse
- Patent Title (中): 集成电路与半导体鳍片保险丝
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Application No.: US14032484Application Date: 2013-09-20
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Publication No.: US09219040B2Publication Date: 2015-12-22
- Inventor: Randy W. Mann , Kingsuk Maitra , Anurag Mittal
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L23/62

Abstract:
Methods of fabricating an integrated circuit with a fin-based fuse, and the resulting integrated circuit with a fin-based fuse are provided. In the method, a fin is created from a layer of semiconductor material and has a first end and a second end. The method provides for forming a conductive path on the fin from its first end to its second end. The conductive path is electrically connected to a programming device that is capable of selectively directing a programming current through the conductive path to cause a structural change in the conductive path to increase resistance across the conductive path.
Public/Granted literature
- US20140021579A1 INTEGRATED CIRCUIT WITH A FIN-BASED FUSE, AND RELATED FABRICATION METHOD Public/Granted day:2014-01-23
Information query
IPC分类: