发明授权
US09219065B2 Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETS
有权
使用应变硅表面沟道MOSFET制造CMOS反相器和集成电路的方法
- 专利标题： Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETS
- 专利标题（中）： 使用应变硅表面沟道MOSFET制造CMOS反相器和集成电路的方法
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申请号： US12573589申请日： 2009-10-05
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公开(公告)号： US09219065B2公开(公告)日： 2015-12-22
- 发明人: Eugene A. Fitzgerald , Nicole Gerrish
- 申请人： Eugene A. Fitzgerald , Nicole Gerrish
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L27/092 ; H01L21/8238 ; H01L29/10
摘要：
A method of fabricating a circuit comprising an nMOSFET includes providing a substrate, depositing a strain-inducing material comprising germanium over the substrate, and integrating a pMOSFET on the substrate, the pMOSFET comprising a strained channel having a surface roughness of less than 1 nm. The strain-inducing material is proximate to and in contact with the pMOSFET channel, the strain in the pMOSFET channel is induced by the strain-inducing material, and a source and a drain of the pMOSFET are at least partially formed in the strain-inducing material.
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