发明授权
- 专利标题： Phase change memory cells with surfactant layers
- 专利标题（中）： 相变记忆细胞与表面活性剂层
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申请号： US14180344申请日： 2014-02-13
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公开(公告)号： US09219231B2公开(公告)日： 2015-12-22
- 发明人: Chung H. Lam , Alejandro G. Schrott
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Ido Tuchman; Vazken Alexanian
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
An example embodiment is a phase change memory cell including a bottom electrode and phase change material carried within a via above the bottom electrode. A surfactant layer is deposited above the bottom electrode. The surfactant layer includes a surfactant configured to lower an interfacial force between the phase change material and the via surface.
公开/授权文献
- US20140158971A1 PHASE CHANGE MEMORY CELLS WITH SURFACTANT LAYERS 公开/授权日：2014-06-12