Invention Grant
- Patent Title: Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution
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Application No.: US14807480Application Date: 2015-07-23
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Publication No.: US09224639B2Publication Date: 2015-12-29
- Inventor: Anh Duong , Errol Todd Ryan
- Applicant: Intermolecular Inc. , GLOBALFOUNDRIES, Inc.
- Applicant Address: US CA San Jose KY Grand Cayman
- Assignee: Intermolecular, Inc.,GLOBALFOUNDRIES, INC.
- Current Assignee: Intermolecular, Inc.,GLOBALFOUNDRIES, INC.
- Current Assignee Address: US CA San Jose KY Grand Cayman
- Main IPC: H01L21/461
- IPC: H01L21/461 ; H01L21/768 ; H01L21/321 ; H01L23/528 ; H01L23/532

Abstract:
Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.
Public/Granted literature
- US20150348833A1 Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution Public/Granted day:2015-12-03
Information query
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