Invention Grant
- Patent Title: Edge termination structure with trench isolation regions
- Patent Title (中): 具有沟槽隔离区域的边缘端接结构
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Application No.: US13961155Application Date: 2013-08-07
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Publication No.: US09224806B2Publication Date: 2015-12-29
- Inventor: Stephan Voss , Alexander Breymesser , Hans-Joachim Schulze , Erich Griebl , Oliver Haeberlen , Andreas Moser
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/761
Abstract:
A semiconductor device includes a semiconductor body and an edge termination structure. The edge termination structure comprises a first oxide layer, a second oxide layer, a semiconductor mesa region between the first oxide layer and the second oxide layer, and a doped field region comprising a first section in the semiconductor mesa region, and a second section in a region below the semiconductor mesa region. The second section overlaps the first and the second oxide layers in the region below the semiconductor mesa region.
Public/Granted literature
- US20150041946A1 Edge Termination Structure with Trench Isolation Regions Public/Granted day:2015-02-12
Information query
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