Invention Grant
- Patent Title: Method of fabricating a charge trap NAND flash memory device
- Patent Title (中): 制造电荷陷阱NAND闪存器件的方法
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Application No.: US13687726Application Date: 2012-11-28
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Publication No.: US09224873B2Publication Date: 2015-12-29
- Inventor: Umberto M. Meotto , Giulio Albini , Paolo Tessariol , Paola Bacciaglia , Marcello Mariani
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L27/115 ; H01L29/66
Abstract:
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a charge trap NAND flash memory device.
Public/Granted literature
- US20130087849A1 METHOD OF FABRICATING A CHARGE TRAP NAND FLASH MEMORY DEVICE Public/Granted day:2013-04-11
Information query
IPC分类:
