公开(公告)号：US09461136B2

公开(公告)日：2016-10-04

申请号：US14207035

申请日：2014-03-12

Applicant: Micron Technology, Inc.

Inventor： Giulio Albini ,  Paola Bacciaglia

IPC: H01L29/76 ,  H01L29/49 ,  H01L29/423 ,  H01L21/28 ,  H01L27/105 ,  H01L29/66 ,  H01L29/792

CPC classification number: H01L29/495 ,  H01L21/28044 ,  H01L21/28114 ,  H01L21/28282 ,  H01L27/105 ,  H01L29/4234 ,  H01L29/4941 ,  H01L29/4966 ,  H01L29/66833 ,  H01L29/792

Abstract: Subject matter disclosed herein relates to a process flow to form a gate structure of a memory device.

Abstract translation: 本文公开的主题涉及形成存储器件的栅极结构的工艺流程。

公开(公告)号：US20160104716A1

公开(公告)日：2016-04-14

申请号：US14969709

申请日：2015-12-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Umberto M. Meotto ,  Giulio Albini ,  Paolo Tessariol ,  Paola Bacciaglia ,  Marcello Mariani

IPC: H01L27/115 ,  H01L21/762 ,  H01L29/06 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L27/11568 ,  H01L21/02233 ,  H01L21/28282 ,  H01L21/76224 ,  H01L27/11573 ,  H01L29/0649 ,  H01L29/66833 ,  H01L29/792

Abstract: Methods of forming integrated circuit devices containing memory cells over a first region of a semiconductor substrate and gate structures over a second region of the semiconductor substrate recessed from the first region. The methods include forming a metal that is common to both the memory cells and the gate structures.

Abstract translation: 在半导体衬底的第一区域上形成包含存储单元的集成电路器件和在半导体衬底的从第一区域凹入的第二区域上的栅极结构的方法。 所述方法包括形成对存储单元和栅极结构都是共同的金属。

公开(公告)号：US09224873B2

公开(公告)日：2015-12-29

申请号：US13687726

申请日：2012-11-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Umberto M. Meotto ,  Giulio Albini ,  Paolo Tessariol ,  Paola Bacciaglia ,  Marcello Mariani

IPC: H01L29/792 ,  H01L27/115 ,  H01L29/66

CPC classification number: H01L27/11568 ,  H01L21/02233 ,  H01L21/28282 ,  H01L21/76224 ,  H01L27/11573 ,  H01L29/0649 ,  H01L29/66833 ,  H01L29/792

Abstract: Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a charge trap NAND flash memory device.

Abstract translation: 本文公开的主题涉及一种制造半导体集成电路器件的方法，更具体地说涉及一种制造电荷阱NAND快闪存储器件的方法。

公开(公告)号：US20140191307A1

公开(公告)日：2014-07-10

申请号：US14207035

申请日：2014-03-12

Applicant: Micron Technology, Inc.

Inventor： Giulio Albini ,  Paola Bacciaglia

IPC: H01L29/49

CPC classification number: H01L29/495 ,  H01L21/28044 ,  H01L21/28114 ,  H01L21/28282 ,  H01L27/105 ,  H01L29/4234 ,  H01L29/4941 ,  H01L29/4966 ,  H01L29/66833 ,  H01L29/792

Abstract: Subject matter disclosed herein relates to a process flow to form a gate structure of a memory device.

Abstract translation: 本文公开的主题涉及形成存储器件的栅极结构的工艺流程。

公开(公告)号：US09780107B2

公开(公告)日：2017-10-03

申请号：US14969709

申请日：2015-12-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Umberto M. Meotto ,  Giulio Albini ,  Paolo Tessariol ,  Paola Bacciaglia ,  Marcello Mariani

IPC: H01L21/28 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66 ,  H01L29/792 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L27/11568 ,  H01L21/02233 ,  H01L21/28282 ,  H01L21/76224 ,  H01L27/11573 ,  H01L29/0649 ,  H01L29/66833 ,  H01L29/792

Abstract: Methods of forming integrated circuit devices containing memory cells over a first region of a semiconductor substrate and gate structures over a second region of the semiconductor substrate recessed from the first region. The methods include forming a metal that is common to both the memory cells and the gate structures.

公开(公告)号：US20130087849A1

公开(公告)日：2013-04-11

申请号：US13687726

申请日：2012-11-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Umberto M. Meotto ,  Giulio Albini ,  Paolo Tessariol ,  Paola Bacciaglia ,  Marcello Mariani

IPC: H01L29/792

CPC classification number: H01L27/11568 ,  H01L21/02233 ,  H01L21/28282 ,  H01L21/76224 ,  H01L27/11573 ,  H01L29/0649 ,  H01L29/66833 ,  H01L29/792

Abstract: Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a charge trap NAND flash memory device.

Abstract translation: 本文公开的主题涉及一种制造半导体集成电路器件的方法，更具体地说，涉及一种制造电荷阱NAND快闪存储器件的方法。