Invention Grant
- Patent Title: High work function, manufacturable top electrode
- Patent Title (中): 高功能,可制造顶电极
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Application No.: US13727962Application Date: 2012-12-27
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Publication No.: US09224878B2Publication Date: 2015-12-29
- Inventor: Sandra G. Malhotra , Hanhong Chen , Wim Deweerd , Arthur Gevondyan , Hiroyuki Ode
- Applicant: Intermolecular, Inc. , Elpida Memory, Inc
- Applicant Address: US CA San Jose JP Tokyo
- Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee Address: US CA San Jose JP Tokyo
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/92 ; H01L49/02 ; H01L51/52 ; H01L51/00

Abstract:
Provided are MIM DRAM capacitors and methods of forming thereof. A MIM DRAM capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 eV). This layer may be used to reduce the leakage current through the capacitor. The capacitor may also include another electrode layer having a high conductivity base portion and a conductive metal oxide portion. The conductive metal oxide portion serves to promote the growth of the high k phase of the dielectric layer.
Public/Granted literature
- US20140187016A1 High Work Function, Manufacturable Top Electrode Public/Granted day:2014-07-03
Information query
IPC分类: