Invention Grant
- Patent Title: Charge pump circuit comprising multiple—gate transistors and method of operating the same
- Patent Title (中): 包括多栅晶体管的电荷泵电路及其操作方法
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Application No.: US14384129Application Date: 2013-03-22
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Publication No.: US09225237B2Publication Date: 2015-12-29
- Inventor: Richard Ferrant
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1252640 20120323
- International Application: PCT/EP2013/056126 WO 20130322
- International Announcement: WO2013/139976 WO 20130926
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02 ; H02M3/07

Abstract:
The invention relates to a charge pump circuit comprising an input node for inputting a voltage to be boosted; an output node for outputting a boosted voltage; a plurality of pumping stages connected in series between the input node and the output node, each pump stage comprising at least one charge transfer transistor, wherein the at least one charge transfer transistor is a double-gate transistor comprising a first gate for turning the transistor on or off according to a first control signal applied to the first gate and a second gate for modifying the threshold voltage of the transistor according to a second control signal applied to the second gate, wherein the first and second control signals have the same phase.
Public/Granted literature
- US20150263610A1 CHARGE PUMP CIRCUIT COMPRISING MULTIPLE - GATE TRANSISTORS AND METHOD OF OPERATING THE SAME Public/Granted day:2015-09-17
Information query
IPC分类: