Invention Grant
US09225237B2 Charge pump circuit comprising multiple—gate transistors and method of operating the same 有权
包括多栅晶体管的电荷泵电路及其操作方法

  • Patent Title: Charge pump circuit comprising multiple—gate transistors and method of operating the same
  • Patent Title (中): 包括多栅晶体管的电荷泵电路及其操作方法
  • Application No.: US14384129
    Application Date: 2013-03-22
  • Publication No.: US09225237B2
    Publication Date: 2015-12-29
  • Inventor: Richard Ferrant
  • Applicant: Soitec
  • Applicant Address: FR Bernin
  • Assignee: SOITEC
  • Current Assignee: SOITEC
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • Priority: FR1252640 20120323
  • International Application: PCT/EP2013/056126 WO 20130322
  • International Announcement: WO2013/139976 WO 20130926
  • Main IPC: G05F1/10
  • IPC: G05F1/10 G05F3/02 H02M3/07
Charge pump circuit comprising multiple—gate transistors and method of operating the same
Abstract:
The invention relates to a charge pump circuit comprising an input node for inputting a voltage to be boosted; an output node for outputting a boosted voltage; a plurality of pumping stages connected in series between the input node and the output node, each pump stage comprising at least one charge transfer transistor, wherein the at least one charge transfer transistor is a double-gate transistor comprising a first gate for turning the transistor on or off according to a first control signal applied to the first gate and a second gate for modifying the threshold voltage of the transistor according to a second control signal applied to the second gate, wherein the first and second control signals have the same phase.
Information query
Patent Agency Ranking
0/0